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專利授權區
專利名稱(中)	二維半導體及其製造方法
專利名稱(英)	TWO-DIMENSIONAL SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF
專利家族	中華民國：I820706 美國：2023-0369478(公開號)
專利權人	國立清華大學 100.00%
發明人	邱博文,葉昭輝
技術領域	材料化工,光電光學,電子電機

專利摘要(中)
一種二維半導體，其用以接觸二金屬，且包含一第一半導體層以及複數第二半導體層。第一半導體層包含一通道區及二金屬接觸區。二金屬接觸區分別連接於通道區的二側。第二半導體層與第一半導體層的二金屬接觸區分別形成具有第二型能帶接合之複數異質接面，其中異質接面間隔排列。藉此，可降低接觸電阻。

專利摘要(中)

一種二維半導體，其用以接觸二金屬，且包含一第一半導體層以及複數第二半導體層。第一半導體層包含一通道區及二金屬接觸區。二金屬接觸區分別連接於通道區的二側。第二半導體層與第一半導體層的二金屬接觸區分別形成具有第二型能帶接合之複數異質接面，其中異質接面間隔排列。藉此，可降低接觸電阻。

專利摘要(英)
A two-dimensional semiconductor which is configured for contacting two metals includes a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer includes a channel region and two metal contacting regions. The two metal contacting regions are connected to two sides of the channel region, respectively. The second semiconductor layers and the two metal contacting regions of the first semiconductor layer form a plurality of heterojunctions having type-II band alignment, respectively, wherein the heterojunctions are arranged and spaced from each other. Therefore, contact resistance can be reduced.

專利摘要(英)

A two-dimensional semiconductor which is configured for contacting two metals includes a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer includes a channel region and two metal contacting regions. The two metal contacting regions are connected to two sides of the channel region, respectively. The second semiconductor layers and the two metal contacting regions of the first semiconductor layer form a plurality of heterojunctions having type-II band alignment, respectively, wherein the heterojunctions are arranged and spaced from each other. Therefore, contact resistance can be reduced.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw