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專利授權區

專利授權區
專利名稱(中)	具超薄結晶性氧化鉿鋯之閘極介電層的鐵電電晶體裝置
專利名稱(英)	Ferroelectric FET device with ultra thin gate dielectric layer of crystallinity HfZrO
專利家族	中華民國：I740465
專利權人	國立清華大學 100%
發明人	吳永俊,侯福居,蔡孟儒
技術領域	電子電機

專利摘要(英)
This invention provides a ferroelectric field effect transistor device which comprises a semiconductor base having a setting plane, and a three-dimensional transistor including a physical channel, a drain, a source, and a gate. Said physical channel has a channel body that is protruding from said setting plane or disposing above the setting plane and is arranged with disposed opposite of a first end and a second end, and a gate dielectric layer that is covering said channel body and made of crystallinity HfZrO with a thickness ranging from 2 nm to 5 nm. Said drain protrudes from said setting plane so as to connect said first end of said channel body. Said source protrudes from said setting plane so as to connect said second end of said channel body. Said gate covers said physical channel and isolates electrically from said drain and said source.

專利摘要(英)

This invention provides a ferroelectric field effect transistor device which comprises a semiconductor base having a setting plane, and a three-dimensional transistor including a physical channel, a drain, a source, and a gate. Said physical channel has a channel body that is protruding from said setting plane or disposing above the setting plane and is arranged with disposed opposite of a first end and a second end, and a gate dielectric layer that is covering said channel body and made of crystallinity HfZrO with a thickness ranging from 2 nm to 5 nm. Said drain protrudes from said setting plane so as to connect said first end of said channel body. Said source protrudes from said setting plane so as to connect said second end of said channel body. Said gate covers said physical channel and isolates electrically from said drain and said source.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw